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DMP2066LSN
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV DSS
-20
?
?
V
I D = -250 μ A, V GS = 0V
Zero Gate Voltage Drain Current
T J = 25 ° C
I DSS
?
?
-1
μ A
V DS = -20V, V GS = 0V
Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 5)
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Note 5)
Diode Forward Voltage (Note 5)
Maximum Body-Diode Continuous Current (Note 1)
I GSS
V GS(th)
I D (ON)
R DS (ON)
g FS
V SD
I S
?
-0.6
-15
?
?
-0.5
?
?
-0.96
?
29
55
9
-0.72
?
± 100
-1.2
?
40
70
?
-1.4
1.7
nA
V
A
m Ω
S
V
A
V DS = 0V, V GS = ± 12V
V DS = V GS , I D = -250 μ A
V GS = -4.5V, V DS = -5V
V GS = -4.5V, I D = -4.6A
V GS = -2.5V, I D = -3.8A
V DS = -10V, I D = -4.5A
I S = -2.1A, V GS = 0V
?
DYNAMIC PARAMETERS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C iss
C oss
C rss
R G
?
?
?
?
820
200
160
2.5
?
?
?
?
pF
pF
pF
Ω
V DS = -15V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q G
Q GS
Q GD
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
10.1
1.5
4.3
4.4
9.9
28.0
23.4
?
?
?
?
?
?
?
nC
ns
V DS = -10V, V GS = -4.5V,
I D = -4.5A
V DS = -10V, V GS = -4.5V,
I D = -1A, R G = 6.0 Ω
Notes:
5. Test pulse width t = 300 μ s.
6. Guaranteed by design. Not subject to production testing.
30
20
24
18
12
6
V GS = 10V
V GS = 4.5V
V GS = 3.0V
V GS = 2.5V
16
12
8
4
V DS = 5.0V
V GS = 2.0V
T A = 150°C
T A = 85°C
0
V GS = 1.5V
0
T A = 125°C
T A = 25°C
T A = -55°C
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5
5
0
0.5 1 1.5 2 2.5 3 3.5
4
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMP2066LSN
Document number: DS31467 Rev. 4 - 2
2 of 5
www.diodes.com
August 2011
? Diodes Incorporated
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